International Atomic Energy Agency by Unknown

Author:Unknown
Language: eng
Format: epub
Published: 2023-05-03T13:57:33+00:00

4.3.4.2. Damaging selected regions

The criteria adopted for the selection of the most suitable combination of probing and damaging ions can be inferred from Fig. 20, which shows, as an example, both the SRIM simulated vacancy profile for 11.25 MeV He ions in silicon [10, 16], assuming a displacement energy of 21 eV [65], and the depth (W) of the depletion region as a function of the applied bias voltage, evaluated through Eq. (4). At reverse bias voltages larger than 40 V, the entire vacancy profile is within the depletion region, whereas for lower voltages, the highly damaged region is located in the neutral region of the diode. These observations have important implications for the CCE degradation behaviour: at reverse bias voltages above 40 V, recombination occurs in the presence of a high electric field, where drift transport dominates; at low reverse bias voltages, the generation mainly affects the diffusion length of minority carriers. To apply the analytical model described in Section 5.2.1, the ion species and energies have to be chosen so that the relevant vacancy profiles fall within the depletion region corresponding to the highest allowed voltages.

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